Semiconductors

2D Nanoelectronics: Physics and Devices of Atomically Thin by Mircea Dragoman, Daniela Dragoman PDF

By Mircea Dragoman, Daniela Dragoman

ISBN-10: 3319484354

ISBN-13: 9783319484358

ISBN-10: 3319484370

ISBN-13: 9783319484372

This publication is devoted to the recent two-dimensional one-atomic-layer-thick fabrics resembling graphene, steel chalcogenides, silicene and different second fabrics. The booklet describes their major actual homes and functions in nanoelctronics, photonics, sensing and computing. a wide a part of the booklet offers with graphene and its impressive actual homes. one other vital a part of the e-book bargains with semiconductor monolayers corresponding to MoS2 with notable purposes in photonics, and electronics. Silicene and germanene are the atom-thick opposite numbers of silicon and germanium with outstanding purposes in electronics and photonics that are nonetheless unexplored. attention of two-dimensional electron gasoline units finish the remedy. The physics of 2DEG is defined intimately and the functions in THz and IR area are discussed.
Both authors are operating at the moment on those 2nd fabrics constructing thought and applications.

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Extra info for 2D Nanoelectronics: Physics and Devices of Atomically Thin Materials

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N-n, p-p, p-n and n-p, can be obtained, this versatility being impossible to be achieved in a semiconductor diode with fixed doping concentrations. By changing the angle of incidence in this graphene diode from 0° to 30° and then to 45°, the mobility changes from 2300 to 2960 cm2/V s, and up to 3400 cm2/ V s in various devices with the distance between gates of 150 and 200 nm, both values being smaller than the mean-free-path in graphene at room temperature. Moreover, as can be seen from Fig. 5 kX, at Vb ¼ VG1 À VDirac ¼ ÀðVG2 À VDirac Þ = 5 V and, when the tilting angle is 45° the diode displays a particular behavior, illustrated in Fig.

The Fourier equation for the heat flux q is q ¼ ÀKrT; where K is the thermal conductivity and rT is the temperature gradient. The thermal conductivity K ¼ Kp þ Ke has two contributions: one from phonons, Kp , and the other from electrons, Ke . In metals, the electrons’ contribution to thermal conductivity is dominant, while in carbon-based materials the phonons’ contribution prevails. Carbon nanotubes and graphene have thermal conductivities with about one order of magnitude larger than that of copper.

8 for the first diode type (with an n-Si substrate) up to 33 for the second one (with a p-Si substrate). 08 (Sinha and Lee 2014). To achieve such a low ideality factor in diodes in which graphene is grown by the LPCVD technique on Cu, it is necessary to etch the top 700 nm of Cu during 90s using ammonium persulfate (APS). This procedure has the role of reducing the metallic impurities in graphene. Then, graphene is transferred on the Si/SiO2 substrate and contacted with Cr/Au contacts. The graphene/n-GaN diode, depicted in Fig.

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2D Nanoelectronics: Physics and Devices of Atomically Thin Materials by Mircea Dragoman, Daniela Dragoman


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